Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7439191B2 · kind B2 · utility
18Cited by
200References
72Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2002 |
| Grant date | Oct 21, 2008 |
| Priority date | — |
| Expiry date | Sep 28, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of silicon layer deposition using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a silicon-containing precursor and a reducing gas on a substrate structure. Thin film transistors, such as for example a bottom-gate transistor or a top-gate transistor, including one or more silicon layers may, be formed using such cyclical deposition techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.