Methods for silicon electrode assembly etch rate and etch uniformity recovery
US7442114B2 · kind B2 · utility
9Cited by
8References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 23, 2004 |
| Grant date | Oct 28, 2008 |
| Priority date | — |
| Expiry date | Dec 10, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32605
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
Methods for cleaning an electrode assembly, which can be used for etching a dielectric material in a plasma etching chamber after the cleaning, comprise polishing a silicon surface of the electrode assembly, preferably to remove black silicon contamination therefrom.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.