Method for fabricating semiconductor device using tungsten as sacrificial hard mask
US7442648B2 · kind B2 · utility
6Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2005 |
| Grant date | Oct 28, 2008 |
| Priority date | — |
| Expiry date | Dec 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/09
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method for fabricating a semiconductor device using tungsten as a sacrificial hard mask material. The method includes the steps of: forming a layer on an etch target layer; forming a photoresist pattern on the layer; etching the layer by using the photoresist pattern as an etch mask along with use of a plasma containing CHF3 gas to form a sacrificial hard mask; and etching the etch target layer by using at least the sacrificial hard mask as an etch mask, thereby obtaining a predetermined pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.