Etch with photoresist mask
US7442649B2 · kind B2 · utility
1Cited by
8References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2005 |
| Grant date | Oct 28, 2008 |
| Priority date | — |
| Expiry date | Jun 5, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching a dielectric layer over a substrate is provided. A photoresist mask is formed over the dielectric layer. The substrate is placed in a plasma processing chamber. An etchant gas comprising NF3 is provided into the plasma chamber. A plasma is formed from the NF3 gas. The dielectric layer is etched through the photoresist mask with the plasma from the NF3 gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.