Gap free anchored conductor and dielectric structure and method for fabrication thereof
US7446036B1 · kind B1 · utility
37Cited by
20References
1Claims
0Family size
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Key dates
| Filing date | Dec 18, 2007 |
| Grant date | Nov 4, 2008 |
| Priority date | — |
| Expiry date | Dec 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microelectronic structure and a method for fabricating the microelectronic structure use a dielectric layer that is located and formed upon a first conductor layer. An aperture is located through the dielectric layer. The aperture penetrates vertically into the first conductor layer and extends laterally within the first conductor layer beneath the dielectric layer while not reaching the dielectric layer, to form an extended and winged aperture. A contiguous via and interconnect may be formed anchored into the extended and winged aperture while using a plating method, absent voids.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.