Composition and method for low temperature deposition of silicon-containing films
US7446217B2 · kind B2 · utility
17Cited by
6References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2003 |
| Grant date | Nov 4, 2008 |
| Priority date | — |
| Expiry date | May 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.