High density trench FET with integrated Schottky diode and method of manufacture
US7446374B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2006 |
| Grant date | Nov 4, 2008 |
| Priority date | — |
| Expiry date | Aug 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
Abstract
A monolithically integrated trench FET and Schottky diode includes a pair of trenches terminating in a first silicon region of first conductivity type. Two body regions of a second conductivity type separated by a second silicon region of the first conductivity type are located between the pair of trenches. A source region of the first conductivity type is located over each body region. A contact opening extends between the pair of trenches to a depth below the source regions. An interconnect layer fills the contact opening so as to electrically contact the source regions and the second silicon region. Where the interconnect layer electrically contacts the second silicon region, a Schottky contact is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.