Utilization of memory-diode which may have each of a plurality of different memory states
US7450416B1 · kind B1 · utility
7Cited by
11References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2004 |
| Grant date | Nov 11, 2008 |
| Priority date | — |
| Expiry date | Nov 12, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/72
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention is a method of undertaking a procedure on a memory-diode, wherein a memory-diode is provided which is programmable so as to have each of a plurality of different threshold voltages. A reading of the state of the memory-diode indicates the so determined threshold voltage of the memory-diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.