Multiple device types including an inverted-T channel transistor and method therefor

US7452768B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Byoung W. Min · Austin, US
• James D. Burnett · Austin, US
• Leo Mathew · Austin, US

Key dates

• Filing date: Oct 25, 2005
• Grant date: Nov 18, 2008
• Expiry date: Oct 25, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A method for making a semiconductor device is provided. The method includes forming a first transistor with a vertical active region and a horizontal active region extending on both sides of the vertical active region. The method further includes forming a second transistor with a vertical active region. The method further includes forming a third transistor with a vertical active region and a horizontal active region extending on only one side of the vertical active region.