Write/delete process for resistive switching memory components
US7457145B2 · kind B2 · utility
10Cited by
12References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2005 |
| Grant date | Nov 25, 2008 |
| Priority date | — |
| Expiry date | May 4, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0069
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The invention relates to a system, a memory component and a process for operating a memory cell, which includes an active material, which can be changed into a more or less conductive state by an appropriate switching process, whereby the process including (a) bringing the memory cell into the more or less conductive state and evaluating the state of the memory cell after it has been changed into the more or less conductive state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.