Hafnium alloy target and process for producing the same
US7459036B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2004 |
| Grant date | Dec 2, 2008 |
| Priority date | — |
| Expiry date | Jun 7, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/158
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 35° from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.