Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride films

US7459380B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• David P. Bour · Cupertino, US
• Sandeep Nijhawa · Los Altos, US
• Jacob Smith · Santa Clara, US
• Lori D. Washington · Union City, US

Key dates

• Filing date: May 5, 2006
• Grant date: Dec 2, 2008
• Expiry date: Jul 31, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0265
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In accordance with the present invention, improved methods for reducing the dislocation density of nitride epitaxial films are provided. Specifically, an in-situ etch treatment is provided to preferentially etch the dislocations of the nitride epitaxial layer to prevent threading of the dislocations through the nitride epitaxial layer. Subsequent to etching of the dislocations, an epitaxial layer overgrowth is performed. In certain embodiments, the etching of the dislocations occurs simultaneously with growth of the epitaxial layer. In other embodiments, a dielectric mask is deposited within the etch pits formed at the dislocations prior to the epitaxial layer overgrowth.