Adhesion improvement for low k dielectrics
US7459404B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2006 |
| Grant date | Dec 2, 2008 |
| Priority date | — |
| Expiry date | Feb 6, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02304
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.