Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain
US7462525B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2007 |
| Grant date | Dec 9, 2008 |
| Priority date | — |
| Expiry date | Oct 25, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6741
Abstract
The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a <110> crystal orientation and a biaxial compressive strain. The term “biaxial compressive stress” is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing <110> layer; and creating a biaxial strain in the silicon-containing <110> layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.