Film formation method and apparatus for semiconductor process for forming a silicon nitride film
US7462571B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2005 |
| Grant date | Dec 9, 2008 |
| Priority date | — |
| Expiry date | Jun 2, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/507
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An impurity-doped silicon nitride or oxynitride film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding or oxynitriding gas, and a third process gas containing a doping gas. This method alternately includes first to fourth steps. The first step performs supply of the first and third process gases to the field. The second step stops supply of the first to third process gases to the field. The third step performs supply of the second process gas to the field while stopping supply of the first and third process gases to the field, and includes an excitation period of exciting the second process gas by an exciting mechanism. The fourth step stops supply of the first to third process gases to the field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.