Multi-state magnetoresistance random access cell with improved memory storage density
US7465589B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2005 |
| Grant date | Dec 16, 2008 |
| Priority date | — |
| Expiry date | Aug 25, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5607
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A multi-state magnetoresistive random access memory device having a pinned ferromagnetic region with a magnetic moment vector fixed in a preferred direction in the absence of an applied magnetic field, a non-ferromagnetic spacer layer positioned on the pinned ferromagnetic region, and a free ferromagnetic region with an anisotropy designed to provide a free magnetic moment vector within the free ferromagnetic region with N stable positions, wherein N is a whole number greater than two, positioned on the non-ferromagnetic spacer layer. The number N of stable positions can be induced by a shape anisotropy of the free ferromagnetic region wherein each N stable position has a unique resistance value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.