Method for forming tungsten materials during vapor deposition processes

US7465666B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Moris Kori · Palo Alto, US
• Alfred Mak · Union City, US
• Jeong Soo Byun · Cupertino, US
• Lawrence Chung-Lai Lei · Milpitas, US
• Hua Chung · San Jose, US
• Ashok Sinha · Palo Alto, US
• Ming Xi · Palo Alto, US

Key dates

• Filing date: Jun 21, 2007
• Grant date: Dec 16, 2008
• Expiry date: Jun 21, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76877
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.