Method of cleaning a wafer
US7468326B2 · kind B2 · utility
19Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2005 |
| Grant date | Dec 23, 2008 |
| Priority date | — |
| Expiry date | Jan 10, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wafer is provided and loaded in a reaction chamber. Subsequently, the wafer is lifted up, and a dry clean process is performed on the wafer to clean the front side, the back side, and the bevel of the wafer. Following that, a deposition process is performed on the wafer. The dry clean process and the deposition process are carried out in an in-situ manner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.