Wafer area pressure control for plasma confinement
US7470627B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2004 |
| Grant date | Dec 30, 2008 |
| Priority date | — |
| Expiry date | Oct 15, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32623
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a wafer area pressure control device that provides wafer area pressure control range greater than 100%. Such a wafer area pressure control device may be three adjustable confinement rings and a confinement block on a holder that may be used to provide the desired wafer area pressure control.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.