Plasma-enhanced cyclic layer deposition process for barrier layers
US7473638B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2006 |
| Grant date | Jan 6, 2009 |
| Priority date | — |
| Expiry date | Jul 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28568
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In one embodiment, a method for forming a metal-containing material on a substrate is provided which includes forming a metal containing barrier layer on a substrate by a plasma-enhanced cyclical vapor deposition process, exposing the substrate to a soak process, and depositing a conductive material on the substrate by a second vapor deposition process. The substrate may be exposed to a silicon-containing compound (e.g., silane) during the soak process. In some examples, a metallic nitride layer may be deposited subsequent to the soak process and prior to the second vapor deposition process. In other examples, the metal containing barrier layer contains metallic titanium, the metallic nitride layer contains titanium nitride, and the conductive material contains tungsten or copper. The plasma-enhanced cyclical vapor deposition process may further include exposing the substrate to a nitrogen precursor, such as nitrogen, hydrogen, a nitrogen/hydrogen mixture, ammonia, hydrazine, or derivatives thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.