Robust Group III light emitting diode for high reliability in standard packaging applications
US7473938B2 · kind B2 · utility
3Cited by
35References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2006 |
| Grant date | Jan 6, 2009 |
| Priority date | — |
| Expiry date | Oct 6, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. The contact layer, the ohmic contact and the passivation layer are made of materials that transmit light generated in the active heterojunction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.