Process for finFET spacer formation

US7476578B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Kangguo Cheng · Schenectady, US
• Xi Li · Somers, US
• Richard S. Wise · Beacon, US

Key dates

• Filing date: Jul 12, 2007
• Grant date: Jan 13, 2009
• Expiry date: Jul 12, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62

Abstract

A process for finFET spacer formation generally includes depositing, in order, a conformal liner material, a conformal spacer material, and a conformal capping material onto the finFET structure; tilt implanting dopant ions into portions of the capping layer about the gate structure; selectively removing undoped capping material about the source and drain regions; selectively removing exposed portions of the spacer material; selectively removing exposed portions of the capping material; anisotropically removing a portion of the spacer material so as to expose a top surface of the gate material and isolate the spacer material to sidewalls of the gate structure; and removing the oxide liner from the fin to form the spacer on the finFET structure.