Patent · US Active

Methods of forming NAND cell units with string gates of various widths

US7476588B2 · kind B2 · utility

2Cited by
3References
23Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 12, 2007
Grant dateJan 13, 2009
Priority date—
Expiry dateJan 12, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B41/35
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Some embodiments include methods of forming a NAND cell unit having a NAND string gate closest to a select gate with a different width than other NAND string gates more distant from the select gate. Some embodiments include utilization of an etch comprising HBr and O2 to extend a pattern through a carbon-containing layer. The patterned carbon-containing layer may be used to pattern NAND cell unit gates. Some embodiments include structures having a patterned carbon-containing layer defining a NAND cell unit having a NAND string gate closest to a select gate with a different width than other NAND string gates more distant from the select gate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.