Method for endpointing CVD chamber cleans following ultra low-k film treatments
US7479191B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2005 |
| Grant date | Jan 20, 2009 |
| Priority date | — |
| Expiry date | Jun 1, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of determining the endpoint of cleaning residues from the internal surfaces of a chemical vapor deposition chamber are described. The methods are especially useful for determining when organic-based residues deposited from an ultra low-k film precursor deposition are removed from the chamber. The methods involve cleaning the chamber with a plasma comprising fluorine and oxygen while monitoring the intensity of the optical emission lines of one or more atomic or molecular species that correlate to the removal of the organic-based residues. Techniques and apparatuses for monitoring different appropriate emission lines are described. Methods of the invention can be used to prevent particle contamination during CVD operations following ultra low-k film precursor depositions and improve wafer throughput in manufacturing environments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.