SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same

US7479306B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Daniel C. Edelstein · White Plains, US
• Stephen M. Gates · Ossining, US
• Alfred Grill · White Plains, US
• Michael Lane · Somers, US
• Qinghuang Lin · Yorktown Heights, US
• Robert D. Miller · San Jose, US
• Deborah A. Neumayer · Danbury, US
• Son Van Nguyen · Yorktown Heights, US

Key dates

• Filing date: May 18, 2005
• Grant date: Jan 20, 2009
• Expiry date: Jan 2, 2027

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/31663

Abstract

A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC═CH, C═CH2, C≡C or a [S]n linkage, where n is a defined above.