MgO/NiFe MTJ for high performance MRAM application
US7479394B2 · kind B2 · utility
31Cited by
4References
23Claims
0Family size
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Key dates
| Filing date | Dec 22, 2005 |
| Grant date | Jan 20, 2009 |
| Priority date | — |
| Expiry date | Mar 21, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/18
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An improved tunneling barrier layer is formed for use in a MTJ device. This is accomplished by forming the tunneling barrier layer in two steps. First a layer of magnesium is deposited by DC sputtering and converted to magnesium oxide through radical oxidation. This is followed by a second, thinner, magnesium layer that is converted to magnesium oxide through normal oxidation. Optionally, there may also be a thin layer of magnesium on the two magnesium oxide layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.