Patent · US Active

Method of forming an isolation structure that includes forming a silicon layer at a base of the recess

US7479440B2 · kind B2 · utility

3Cited by
25References
24Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 11, 2007
Grant dateJan 20, 2009
Priority date—
Expiry dateApr 27, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/76224
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method of depositing dielectric material into sub-micron spaces and resultant structures is provided. After a trench is etched in the surface of a wafer, a liner layer preferably is deposited into the trench. An anisotropic plasma process is then performed on the trench. A silicon layer may be deposited on the base of the trench during the plasma process, or the plasma can treat the liner layer. The trench is then filled with a spin-on precursor. A densification or reaction process is then applied to convert the spin-on material into an insulator, and oxidizing the silicon rich layer on the base of the trench. The resulting trench has a consistent etch rate from top to bottom of the trench.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.