Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof
US7479457B2 · kind B2 · utility
1Cited by
25References
14Claims
0Family size
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Key dates
| Filing date | Sep 8, 2005 |
| Grant date | Jan 20, 2009 |
| Priority date | — |
| Expiry date | Sep 8, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/427
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Atomic oxygen generated in oxygen stripping plasmas reacts with and damages low-k dielectric materials during stripping of dielectric post etch residues. While damage of low-k dielectric materials during stripping of dielectric post etch residues is lower with hydrogen stripping plasmas, hydrogen stripping plasmas exhibit lower strip rates. Inclusion of oxygen in a hydrogen stripping plasma improves both photoresist strip rate and uniformity, while maintaining a hydrogen to oxygen ratio avoids low-k dielectric material damage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.