Spin transfer MRAM device with novel magnetic free layer
US7480173B2 · kind B2 · utility
57Cited by
7References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2007 |
| Grant date | Jan 20, 2009 |
| Priority date | — |
| Expiry date | Aug 7, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/935
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A CPP MTJ MRAM element utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes a tunneling barrier layer of MgO and a non-magnetic CPP layer of Cu or Cr and utilizes a novel free layer comprising a thin layer of Ta or Hf sandwiched by layers of CoFeB. The device is characterized by values of DR/R between approximately 95% and 105%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.