Method of fabricating a metal oxynitride thin film that includes a first annealing of a metal oxide film in a nitrogen-containing atmosphere to form a metal oxynitride film and a second annealing of the metal oxynitride film in an oxidizing atmosphere
US7482234B2 · kind B2 · utility
3Cited by
1References
4Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Aug 27, 2004 |
| Grant date | Jan 27, 2009 |
| Priority date | — |
| Expiry date | Dec 1, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After the surface of the substrate is cleaned, an interface layer or an antidiffusion film is formed. A metal oxide film is built upon the antidiffusion film Annealing is done in an NH3 atmosphere so as to diffuse nitrogen in the metal oxide film. Building of the metal oxide film and diffusion of nitrogen are repeated several times, whereupon annealing is done in an O2 atmosphere. By annealing the film in an O2 atmosphere at a temperature higher than 650° C., the leak current in the metal oxide film is controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.