Method of configuring a process to obtain a thin layer with a low density of holes
US7485545B2 · kind B2 · utility
2Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2006 |
| Grant date | Feb 3, 2009 |
| Priority date | — |
| Expiry date | Apr 21, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for configuring a process for treating a semiconductor wafer. A minimum layer thickness of a transferred layer to be provided is determined to obtain a processed layer that has a preselected target thickness and target maximum density of through holes that extend completely therethrough, by conducting a predetermined finishing sequence of operations that improve the surface quality of the layer. The minimum thickness is determined such that the density of through holes remains below the target maximum density after each operation in the finishing sequence.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.