Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same
US7488640B2 · kind B2 · utility
0Cited by
7References
8Claims
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Key dates
| Filing date | Oct 29, 2004 |
| Grant date | Feb 10, 2009 |
| Priority date | — |
| Expiry date | Feb 7, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28194
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure (e.g., field effect transistor) and a method for making the structure, include a substrate having a source region, a drain region, and a channel region therebetween, an insulating layer disposed over the channel region, the insulating layer including a layer including aluminum nitride disposed over the channel region, and a gate electrode disposed over the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.