Metal-free catalysts for pulsed deposition layer process for conformal silica laminates
US7491653B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2005 |
| Grant date | Feb 17, 2009 |
| Priority date | — |
| Expiry date | Apr 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76837
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal- and metalloid-free nanolaminate dielectric film can be formed according to a pulsed layer deposition (PDL) process. A metal- and metalloid-free compound is used to catalyze the reaction of silica deposition by surface reaction of alkoxysilanols. Films can be grown at rates faster than 30 nm per exposure cycle. The invention can be used for the deposition of both doped (e.g., PSG) and undoped silicon oxide films. The films deposited are conformal, hence the method can accomplish void free gap-fill in high aspect ratio gaps encountered in advanced technology nodes (e.g., the 45 nm technology node and beyond), and can be used in other applications requiring conformal dielectric deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.