Mask defect analysis system
US7492941B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2007 |
| Grant date | Feb 17, 2009 |
| Priority date | — |
| Expiry date | Jun 27, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/84
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An automated system for analyzing mask defects in a semiconductor manufacturing process is presented. This system combines results from an inspection tool and design layout data from a design data repository corresponding to each mask layer being inspected with a computer program and a predetermined rule set to determine when a defect on a given mask layer has occurred. Mask inspection results include the presence, location and type (clear or opaque) of defects. Ultimately, a determination is made as to whether to scrap, repair or accept a given mask based on whether the defect would be likely to cause product failure. Application of the defect inspection data to the design layout data for each mask layer being inspected prevents otherwise acceptable wafer masks from being scrapped when the identified defects are not in critical areas of the mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.