Trench capacitor with void-free conductor fill
US7494891B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2006 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Oct 13, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/047
Abstract
A method forms a node dielectric in a bottle shaped trench and then deposits an initial conductor within the lower portion of the bottle shaped trench, such that a void is formed within the initial conductor. Next, the method forms an insulating collar in the upper portion of the bottle shaped trench above the initial conductor. Then, the method simultaneously etches a center portion of the insulating collar and the initial conductor until the void is exposed. This etching process forms a center opening within the insulating collar and the initial conductor. Additional conductor is deposited in the center opening such that the additional conductor is formed at least to the level of the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.