Semiconductor structures including multiple crystallographic orientations and methods for fabrication thereof

US7494918B2 · kind B2 · utility

Assignees

• International Business Machines Corporation · US
• Advanced Micro Devices, Inc. · US

Inventors

• Byeong Y. Kim · Lagrangeville, US
• Xiaomeng Chen · Hsinchu, TW
• Judson R. Holt · Wappingers Falls, US
• Christopher D. Sheraw · Wappingers Falls, US
• Linda Black · Wappingers Falls, US
• Igor Peidous · Fishkill, US

Key dates

• Filing date: Oct 5, 2006
• Grant date: Feb 24, 2009
• Expiry date: Feb 20, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

Semiconductor structures and methods for fabrication thereof are predicated upon epitaxial growth of an epitaxial surface semiconductor layer upon a semiconductor substrate having a first crystallographic orientation. The semiconductor substrate is exposed within an aperture within a semiconductor-on-insulator structure. The epitaxial surface semiconductor layer alternatively contacts or is isolated from a surface semiconductor layer having a second crystallographic orientation within the semiconductor-on-insulator structure. A recess of the semiconductor surface layer with respect to a buried dielectric layer thereunder and a hard mask layer thereover provides for inhibited second crystallographic phase growth within the epitaxial surface semiconductor layer.