Method for forming fine pattern of semiconductor device
US7494935B2 · kind B2 · utility
1Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2007 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Jul 20, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0035
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for forming a fine pattern of a semiconductor device includes forming a first photoresist film pattern over a semiconductor substrate including an underlying layer, exposing the first photoresist film pattern to generate an acid from the first photoresist film pattern, bleaching the first photoresist film pattern, and forming a second photoresist film pattern between the first photoresist patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.