Patent · US Active

Integrated circuit memory having a read circuit

US7499344B2 · kind B2 · utility

4Cited by

9References

8Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thomas Nirschl · Putzbrunn, DE
Heinz Honigschmid · Starnberg, DE

Key dates

Filing date	Jan 5, 2006
Grant date	Mar 3, 2009
Priority date	—
Expiry date	Sep 23, 2026

Classification

Technology area (CPC G)Physics
CPC primaryG11C2211/5645
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory includes a resistive memory cell and a circuit configured to provide an output signal indicating a state of the memory cell based on a comparison of a voltage across the memory cell to a threshold voltage.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.