Grafted seed layer for electrochemical plating
US7504335B2 · kind B2 · utility
1Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2006 |
| Grant date | Mar 17, 2009 |
| Priority date | — |
| Expiry date | Dec 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Generally, the process includes depositing a barrier layer and seed layer on a feature formed in a dielectric layer, performing a grafting process, initiating a copper layer and then filing the feature by use of a bulk copper fill process. Copper features formed according to aspects described herein have desirable adhesion properties to a barrier and seed layers formed on a semiconductor substrate and demonstrate enhanced electromigration and stress migration results in the fabricated devices formed on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.