Method of forming an ultra-thin [[HfSiO]] metal silicate film for high performance CMOS applications and semiconductor structure formed in said method
US7504700B2 · kind B2 · utility
18Cited by
13References
20Claims
0Family size
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Key dates
| Filing date | Apr 21, 2005 |
| Grant date | Mar 17, 2009 |
| Priority date | — |
| Expiry date | Jun 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure and method of forming the same, comprising forming a uniform buffer layer of diffusion-controlling stable material on top of a base gate dielectric layer, and then forming a uniform layer which contains a source of transitional metal atoms, and then annealing the structure to diffuse the transitional metal atoms from their source through the diffusion-controlling material and into the base gate dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.