Patent · US Active

Model and parameter selection for optical metrology

US7505153B2 · kind B2 · utility

4Cited by
26References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 12, 2008
Grant dateMar 17, 2009
Priority date
Expiry dateFeb 12, 2028

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/70625
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A profile model for use in optical metrology of structures in a wafer is selected, the profile model having a set of geometric parameters associated with the dimensions of the structure. The set of geometric parameters is selected to a set of optimization parameters. The number of optimization parameters within the set of optimization parameters is less than the number of geometric parameters within the set of geometric parameters. A set of selected optimization parameters is selected from the set of optimization parameters. The parameters of the set of selected geometric parameters are used as parameters of the selected profile model. The selected profile model is tested against one or more termination criteria.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.