Feature optimization using interference mapping lithography
US7506299B2 · kind B2 · utility
24Cited by
12References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2004 |
| Grant date | Mar 17, 2009 |
| Priority date | — |
| Expiry date | Mar 26, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70125
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed concepts include a method of, and program product for, optimizing an illumination profile of a pattern to be formed in a surface of a substrate relative to a given mask. Steps include mathematically representing resolvable feature(s) from the given mask, generating an interference map representation from the previous step, modifying the interference map representation to maximize intensity corresponding to the resolvable features, and determining assist feature size(s) such that intensity side lobes do not print.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.