Copper alloy sputtering target and semiconductor element wiring
US7507304B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2003 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | May 26, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Provided is a first copper alloy sputtering target comprising 0.5 to 4.0 wt % of Al and 0.5 wtppm or less of Si; a second copper alloy sputtering target comprising 0.5 to 4.0 wt % of Sn and 0.5 wtppm or less of Mn; the first or the second alloy sputtering target further comprising one or more selected from among Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wtppm or less; and a semiconductor element wiring formed by the use of the above target. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.