Method of forming high density planar magnetic domain wall memory
US7514271B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2007 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Mar 30, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/53165
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of forming a magnetic domain wall memory apparatus with write/read capability includes forming a plurality of coplanar shift register structures each comprising an elongated track formed from a ferromagnetic material having a plurality of magnetic domains therein, the shift register structures further having a plurality of discontinuities therein to facilitate domain wall location: forming a magnetic read element associated with each of the shift register structures: and forming a magnetic write element associated with each of the shift register structures, the magnetic write element further comprising a write wire having a constriction therein, the constriction located at a point corresponding to the location of one of the plurality of discontinuities in the associated shift register structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.