Method for manufacturing a narrow structure on an integrated circuit
US7514367B2 · kind B2 · utility
3Cited by
101References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 11, 2006 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Dec 21, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/947
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing for providing a narrow line, such as a phase change bridge, on a substrate having a top surface, includes first forming a layer of first material on the substrate. Then, a layer of a pattern material is applied on the layer of first material, and a pattern is defined. The pattern includes a ledge having a sidewall extending substantially to the layer of first material. A sidewall etch mask is formed on the ledge, and used to define a line of the first material on the substrate having a width substantially determined by the width of the sidewall etch mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.