Plasma generator, ozone generator, substrate processing apparatus and manufacturing method of semiconductor device
US7514377B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 26, 2003 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Jun 6, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H2242/22
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
To provide a generator capable of generating plasma and ozone with high efficiency and easy to handle, with a simple structure. An electrode part 10 is formed of electrodes 11 and 12 without dielectric material interposed therebetween. An arc-extinguishing capacitor 13 as a charge storage part for storing charge is connected in series to the electrode part 10. An AC power source 15 generating plasma by causing self-arc-extinguishing discharge between the electrodes 11 and 12 by applying AC voltage to charge and discharge the arc-extinguishing capacitor 13, is connected to both ends of a circuit in which the electrode part 10 and the arc-extinguishing capacitor 13 are connected in series. The arc-extinguishing capacitor 13 and one electrode 12 of the electrode part 10 connected thereto are unitized, for making the electrode part multi-polarized. A unit is constituted of a floating electrode serving as both of the one electrode 12 of the electrode part 10 and one electrode of the arc-extinguishing capacitor 13, an insulating material provided around the floating electrode and a grounding electrode provided around the insulating material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.