Parallel profile determination in optical metrology
US7515283B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2006 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Jun 5, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/95615
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In processing requests for wafer structure profile determination from optical metrology measurements, a plurality of measured diffraction signal of a plurality of structures formed on one or more wafers is obtained. The plurality of measured diffraction signals is distributed to a plurality of instances of a profile search module. The plurality of instances of the profile search model is activated in one or more processing threads of one or more computer systems. The plurality of measured diffraction signals is processed in parallel using the plurality of instances of the profile search module to determine profiles of the plurality of structures corresponding to the plurality of measured diffraction signals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.