Structure and method of chemically formed anchored metallic vias
US7517736B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2006 |
| Grant date | Apr 14, 2009 |
| Priority date | — |
| Expiry date | Mar 19, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods are provided that enable the ability to use a less aggressive liner processes, while producing structures known to give a desired high stress migration and electro-migration reliability. The present invention circumvents the issue of sputter damage of low k (on the order of 3.2 or less) dielectric by creating the via “anchors” (interlocked and interpenetrated vias) through chemical means. This allows the elimination or significant reduction of the sputter-etching process used to create the via penetration (“drilling, gouging”) into the line below in the barrier/seed metallization step. The present invention achieves the above, while maintaining a reliable copper fill and device structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.