Method for manufacturing semiconductor device having trench
US7517771B2 · kind B2 · utility
1Cited by
10References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2006 |
| Grant date | Apr 14, 2009 |
| Priority date | — |
| Expiry date | Jan 10, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes steps of: forming a trench on a semiconductor substrate, which is made of silicon; and filling the trench with an epitaxial layer. The epitaxial layer is made of silicon, and the step of filling the trench includes a step of performing a plasma CVD method with using a silicon source gas. By using anisotropic character of a plasma, the epitaxial layer is selectively deposited on a bottom of the trench. Thus, the trench is filled with the epitaxial layer having no void.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.