Silicon parts having reduced metallic impurity concentration for plasma reaction chambers
US7517803B2 · kind B2 · utility
5Cited by
16References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2004 |
| Grant date | Apr 14, 2009 |
| Priority date | — |
| Expiry date | Dec 3, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3255
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Silicon parts of a semiconductor processing apparatus containing low levels of metal impurities that are highly mobile in silicon are provided. The silicon parts include, for example, rings, electrodes and electrode assemblies. The silicon parts can reduce metal contamination of wafers processed in plasma atmospheres.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.